絲?。?a target="_blank" title="Marking" href="/c1815/marking.html">C1815；Package：TO-92；Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications ? High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) ? Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

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TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/c1815/marking.html">C1815；Package：TO-92；Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications ? High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) ? Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：279.37 Kbytes 頁(yè)數(shù)：4 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/c1815/marking.html">C1815；Package：TO-92；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications ? High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) ? Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：256.029 Kbytes 頁(yè)數(shù)：4 Pages

TOSHIBA

東芝

NPN Transistor

Features ● Power dissipation

文件：142.23 Kbytes 頁(yè)數(shù)：2 Pages

KEXIN

科信電子

NPN SILICON TRANSISTOR

文件：168.25 Kbytes 頁(yè)數(shù)：2 Pages

MICRO-ELECTRONICS

NPN Type Plastic Encapsulate Transistors

FEATURES ? Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) ? Collector Current ICM: 0.15 A ? Collector-Base Voltage V(BR)CBO: 60 V

文件：188.02 Kbytes 頁(yè)數(shù)：2 Pages

SECOS

喜可士

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

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TGS

絲?。?a target="_blank" title="Marking" href="/hf/marking.html">HF；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency g

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LUGUANG

魯光電子

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

文件：1.94881 Mbytes 頁(yè)數(shù)：3 Pages

DGNJDZ

南晶電子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

文件：243.05 Kbytes 頁(yè)數(shù)：2 Pages

KOOCHIN

灝展電子