| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：297.96 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：279 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications ? High DC current gain: hFE (1) = 2000 (min) (VCE = ?2 V, IC = ?1 A) ? Low saturation voltage: VCE (sat) = ?1.5 V (max) (IC = ?3 A) ? Complementary to 2SD1223 文件：173.52 Kbytes 頁數(shù)：4 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：298.43 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：279.47 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：298.43 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Complementary to 2SD1223 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：279.47 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistors 文件：88.64 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistor 文件：254.19 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
詳細(xì)參數(shù)
- 型號：
2SB90
- 制造商：
PANASONIC
- 制造商全稱：
Panasonic Semiconductor
- 功能描述：
Si PNP EPITAXIAL PLANAR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
詢價 | |||
sanyo |
24+ |
TO-220 |
8858 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
sanyo |
24+ |
TO-220 |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
PANASONIC/松下 |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
TOSHIBA/東芝 |
24+ |
TO220 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
PANASONIC |
25+ |
TO-TO-220 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
TOSHIBA/東芝 |
25+ |
TO220 |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
SANYO/三洋 |
2022+ |
136 |
全新原裝 貨期兩周 |
詢價 | |||
SANYO |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 |
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相關(guān)庫存
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