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          首頁 >2SB90>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SB906

          TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

          Audio Frequency Power Amplifier Application ? Low collector saturation voltage : VCE (sat) = ?1.0 V (typ.) (IC = ?3 A, IB = ?0.3 A) ? High power dissipation: PC = 20 W (Tc = 25°C) ? Complementary to 2SD1221

          文件:150.53 Kbytes 頁數(shù):3 Pages

          TOSHIBA

          東芝

          2SB906

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁數(shù):73 Pages

          TOSHIBA

          東芝

          2SB906

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:279.8 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB906

          Silicon PNP Epitaxial

          ■ Features ● Low collector saturation voltage ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SD1221

          文件:39.41 Kbytes 頁數(shù):1 Pages

          KEXIN

          科信電子

          2SB906-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:298.85 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB906-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:279.8 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB907

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:297.96 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB907

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= -1A ·Fast switching speed ·Large current capacity ·Complementary to 2SD1222 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:279 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SB907

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁數(shù):73 Pages

          TOSHIBA

          東芝

          2SB907

          TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

          Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications ? High DC current gain: hFE (1) = 2000 (min) (VCE = ?2 V, IC = ?1 A) ? Low saturation voltage: VCE (sat) = ?1.5 V (max) (IC = ?2 A) ? Complementary to 2SD1222.

          文件:173.44 Kbytes 頁數(shù):4 Pages

          TOSHIBA

          東芝

          詳細(xì)參數(shù)

          • 型號(hào):

            2SB90

          • 制造商:

            PANASONIC

          • 制造商全稱:

            Panasonic Semiconductor

          • 功能描述:

            Si PNP EPITAXIAL PLANAR

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          24+
          TO-220
          10000
          全新
          詢價(jià)
          sanyo
          24+
          TO-220
          8858
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          sanyo
          24+
          TO-220
          6540
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價(jià)
          PANASONIC/松下
          TO-220
          22+
          6000
          十年配單,只做原裝
          詢價(jià)
          TOSHIBA/東芝
          24+
          TO220
          990000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          PANASONIC
          25+
          TO-TO-220
          12300
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價(jià)
          TOSHIBA/東芝
          25+
          TO220
          54648
          百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià)
          詢價(jià)
          三年內(nèi)
          1983
          只做原裝正品
          詢價(jià)
          SANYO/三洋
          2022+
          136
          全新原裝 貨期兩周
          詢價(jià)
          SANYO
          NA
          8560
          一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
          詢價(jià)
          更多2SB90供應(yīng)商 更新時(shí)間2026-1-19 16:00:00
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