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    首頁 >2SB16>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    2SB1668

    For Power amplification (-100V, -8A)

    For Power amplification (?100V, ?8A) Features 1) High hFE by darlington connection. 2) Built-in resistors between base and emitter. 3) Damper diode is incorporated. Applications Relay drive Motor drive

    文件:53.81 Kbytes 頁數(shù):2 Pages

    ROHM

    羅姆

    2SB1669

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0

    文件:138.29 Kbytes 頁數(shù):6 Pages

    NEC

    瑞薩

    2SB1669

    SILICON POWER TRANSISTOR

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = ?

    文件:261.37 Kbytes 頁數(shù):8 Pages

    RENESAS

    瑞薩

    2SB1669

    isc Silicon PNP Power Transistor

    DESCRIPTION ? High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is idea

    文件:353.68 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    2SB1669-S

    SILICON POWER TRANSISTOR

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = ?

    文件:261.37 Kbytes 頁數(shù):8 Pages

    RENESAS

    瑞薩

    2SB1669-S

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0

    文件:138.29 Kbytes 頁數(shù):6 Pages

    NEC

    瑞薩

    2SB1669-Z

    SILICON POWER TRANSISTOR

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = ?

    文件:261.37 Kbytes 頁數(shù):8 Pages

    RENESAS

    瑞薩

    2SB1669-Z

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

    PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0

    文件:138.29 Kbytes 頁數(shù):6 Pages

    NEC

    瑞薩

    2SB1669-Z

    isc Silicon NPN Power Transistor

    DESCRIPTION ? High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transi

    文件:239.17 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    2SB1672

    Power Transistor (-80V, -7A)

    Features 1) Low saturation voltage. (Typ. VCE(sat) = ?0.3V at IC / IB =?4A / ?0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C). 4) Wide SOA (safe operating area). 5) Complements the 2SD2611.

    文件:54.57 Kbytes 頁數(shù):1 Pages

    ROHM

    羅姆

    技術(shù)參數(shù)

    • NPN/PNP:

      PNP

    • Vcbo (V):

      -30

    • VCEO (V):

      -30

    • Vebo (V):

      -6

    • IC (A) @25 °C:

      -5

    • VCE(sat) (V) max.:

      -0.5

    • hFE min.:

      150

    • hFE max.:

      600

    • fT (MHz) typ.:

      95

    • Cob (pF) typ.:

      100

    • Package Type:

      MP-5

    • Production Status:

      EOL announced

    供應(yīng)商型號品牌批號封裝庫存備注價格
    NEC進(jìn)口
    1215+
    TO-126
    150000
    全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
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    NEC
    24+
    8858
    公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
    詢價
    NEC
    25+
    TO-126
    2987
    只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電
    詢價
    長電
    25+23+
    TO-126
    24577
    絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
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    18+
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    85600
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    20+
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    24+
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    21+
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    30000
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    23+
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    NEC
    25+
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    8880
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    更多2SB16供應(yīng)商 更新時間2026-1-22 11:04:00

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