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          首頁 >2SB1669>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SB1669

          SILICON POWER TRANSISTOR

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = ?

          文件:261.37 Kbytes 頁數:8 Pages

          RENESAS

          瑞薩

          2SB1669

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0

          文件:138.29 Kbytes 頁數:6 Pages

          NEC

          瑞薩

          2SB1669

          isc Silicon PNP Power Transistor

          DESCRIPTION ? High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is idea

          文件:353.68 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SB1669

          Bipolar Power Transistors

          Support is limited to customers who have already adopted these products.\n\nThe 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0 V, IC = ?0.5 A)\n? Z type available for surface mounting supported prodcuts;

          Renesas

          瑞薩

          2SB1669-S

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0

          文件:138.29 Kbytes 頁數:6 Pages

          NEC

          瑞薩

          2SB1669-S

          SILICON POWER TRANSISTOR

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = ?

          文件:261.37 Kbytes 頁數:8 Pages

          RENESAS

          瑞薩

          2SB1669-Z

          SILICON POWER TRANSISTOR

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = ?

          文件:261.37 Kbytes 頁數:8 Pages

          RENESAS

          瑞薩

          2SB1669-Z

          isc Silicon NPN Power Transistor

          DESCRIPTION ? High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transi

          文件:239.17 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          2SB1669-Z

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ? High DC current amplifier rate hFE ≥ 100 (VCE = ?5.0

          文件:138.29 Kbytes 頁數:6 Pages

          NEC

          瑞薩

          2SB1669_15

          SILICON POWER TRANSISTOR

          文件:262.029 Kbytes 頁數:8 Pages

          RENESAS

          瑞薩

          技術參數

          • Vcbo (V):

            -60

          • VCEO (V):

            -60

          • Vebo (V):

            -7

          • IC @25 °C (A):

            -3

          • VCE (sat) (V):

            -1

          • hFE:

            100-400

          • Pc (W):

            25

          • fT (Typical) (GHz):

            0.005

          • Cob (Typical) (pF):

            80

          供應商型號品牌批號封裝庫存備注價格
          Renesas(瑞薩)
          23+
          原廠封裝
          32078
          10年以上分銷商,原裝進口件,服務型企業(yè)
          詢價
          RENESAS
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網
          詢價
          NEC
          24+
          8858
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          NEC
          23+
          TO-263
          20000
          原裝正品,假一罰十
          詢價
          NEC
          25+
          SOT-263
          2987
          只售原裝自家現(xiàn)貨!誠信經營!歡迎來電
          詢價
          NEC
          18+
          TO-263
          85600
          保證進口原裝可開17%增值稅發(fā)票
          詢價
          RENESAS
          24+
          TO263
          20000
          全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div>
          詢價
          NEC
          20+
          TO-252
          36800
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          NEC
          24+
          6540
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          NEC
          25+
          TO-263
          12000
          一級代理 原裝現(xiàn)貨
          詢價
          更多2SB1669供應商 更新時間2026-1-20 10:45:00
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