| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications 文件：245.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications ? High breakdown voltage: VCEO = ?140 V (min) ? Complementary to 2SD2385 文件：139.39 Kbytes 頁數(shù)：2 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ? High DC Current Gain- : hFE= 5000(Min)@IC= -7A ? Complement to Type 2SD2385 APPLICATIONS ? Designed for power amplifier applications 文件：245.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-3PL package ? Complement to type 2SD2385 ? High DC current gain ? Low collector saturation voltage ? DARLINGTON APPLICATIONS ? For power amplifier applications 文件：113.1 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications ? High breakdown voltage: VCEO = ?140 V (min) ? Complementary to 2SD2386 文件：145.15 Kbytes 頁數(shù)：3 Pages | TOSHIBA 東芝 | TOSHIBA | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications ? High breakdown voltage: VCEO = ?140 V (min) ? Complementary to 2SD2387 文件：145.47 Kbytes 頁數(shù)：3 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ? With TO-3PI package ? Complement to type 2SD2387 APPLICATIONS ? For power amplifier applications 文件：135.55 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ? With TO-3PI package ? Complement to type 2SD2387 APPLICATIONS ? For power amplifier applications 文件：161.14 Kbytes 頁數(shù)：3 Pages | JMNIC 錦美電子 | JMNIC | ||
Silicon PNP Darlington Power Transistor DESCRIPTION ? High DC Current Gain- : hFE= 5000(Min)@lc= -7A ? Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -7A ? Complement to Type 2SD2387 APPLICATIONS ? Designed for power amplifier applications. 文件：137.75 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ? With TO-3PI package ? Complement to type 2SD2387 APPLICATIONS ? For power amplifier applications 文件：125.57 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
4A
- 最大工作頻率：
25MHZ
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
15W
- 放大倍數(shù)：
- 圖片代號：
A-63
- vtest：
60
- htest：
25000000
- atest：
4
- wtest：
15
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MAT |
24+ |
90000 |
詢價 | ||||
TOSHIBA/東芝 |
TO-3PL |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
23+ |
TO |
20000 |
正品原裝貨價格低 |
詢價 | |||
HITACHI |
25+ |
TO-3P |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
SK |
24+ |
原廠封裝 |
5620 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
SANKEN |
2016+ |
TO247 |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
SANKEN |
23+ |
TO-3P |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SANKEN |
11+ |
TO-3P |
106 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價 | ||
SANKEN |
20+ |
TO-218 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
SANKEN |
25+ |
TO-3P |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |
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