| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) 文件：91.07 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220C package ? High DC current gain ? DARLINGTON APPLICATIONS ? For medium speed and power switching applications 文件：81.96 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220C package ? High DC current gain ? DARLINGTON APPLICATIONS ? For medium speed and power switching applications 文件：88.92 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220Fa package ? High DC current gain ? DARLINGTON APPLICATIONS ? For medium speed and power switching applications 文件：119.24 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -8OV(Min) ? High DC Current Gain- ? Built-in resistor between base and emitter ? Built-in damper diode APPLICATIONS ? Designed for power amplifier applications. 文件：129.55 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ? High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS ? Designed for power amplifier applications. 文件：242.62 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/c7/marking.html">C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) 文件：91.07 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing automatic insertion with radial taping 文件：52.74 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing automatic insertion with radial taping 文件：54.62 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS ? High Breakdown Voltage : VCEO = -140V (Min) ? Complementary to 2SD2384 文件：138.37 Kbytes 頁數(shù)：2 Pages | TOSHIBA 東芝 | TOSHIBA |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
4A
- 最大工作頻率：
25MHZ
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
15W
- 放大倍數(shù)：
- 圖片代號：
A-63
- vtest：
60
- htest：
25000000
- atest：
4
- wtest：
15
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MAT |
24+ |
90000 |
詢價(jià) | ||||
TOSHIBA/東芝 |
TO-3PL |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
23+ |
TO |
20000 |
正品原裝貨價(jià)格低 |
詢價(jià) | |||
HITACHI |
25+ |
TO-3P |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
SK |
24+ |
原廠封裝 |
5620 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SANKEN |
2016+ |
TO247 |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
SANKEN |
23+ |
TO-3P |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
SANKEN |
11+ |
TO-3P |
106 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價(jià) | ||
SANKEN |
20+ |
TO-218 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
SANKEN |
25+ |
TO-3P |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) |
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