| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150 文件：1.61084 Mbytes 頁數(shù)：4 Pages | JIANGSU 長電科技 | JIANGSU | ||
PNP Silicon Medium Power Transistor FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C 文件：183.08 Kbytes 頁數(shù)：2 Pages | SECOS 喜可士 | SECOS | ||
SOT-89-3L Plastic-Encapsulate PNP Transistors FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150 文件：1.01929 Mbytes 頁數(shù)：3 Pages | LUGUANG 魯光電子 | LUGUANG | ||
絲?。?a target="_blank" title="Marking" href="/aeq/marking.html">AEQ；Package：SOT-89；Low VCE(sat) Transistor(-20V,-3A) FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Excellent DC current gain characterisitics. Complementary the 2SD2150. APPLICATIONS This device is designed as a general purpose amplifier and switching. 文件：493.57 Kbytes 頁數(shù)：4 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 文件：109.45 Kbytes 頁數(shù)：1 Pages | WINNERJOIN 永而佳 | WINNERJOIN | ||
Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA). FEATURES ? Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ? Excellent DC current gain characterisitics. ? Complementary the 2SD2150. 文件：132.74 Kbytes 頁數(shù)：2 Pages | MAKOSEMI 美科半導(dǎo)體 | MAKOSEMI | ||
Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics. Applications General purpose amplifier. 文件：781.09 Kbytes 頁數(shù)：6 Pages | FOSHAN 藍箭電子 | FOSHAN | ||
PNP Transistors ■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150 文件：629.64 Kbytes 頁數(shù)：3 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
Plastic-Encapsulate Transistors FEATURES ? Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ? Excellent DC current gain characterisitics. ? Complementary the 2SD2150. 文件：203.17 Kbytes 頁數(shù)：2 Pages | HOTTECH 合科泰 | HOTTECH | ||
Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 文件：61.39 Kbytes 頁數(shù)：1 Pages | TEL | TEL |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
開關(guān)管 （S）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
3A
- 最大工作頻率：
5MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BD936F,2SB1015,2SB1094,2SB1375,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
B-10
- vtest：
60
- htest：
5000000
- atest：
3
- wtest：
0
技術(shù)參數(shù)
- Vcbo (V)：
-60
- VCEO (V)：
-60
- Vebo (V)：
-7
- IC @25 °C (A)：
-3
- VCE (sat) (V)：
-1
- hFE：
100-400
- Pc (W)：
25
- fT (Typical) (GHz)：
0.005
- Cob (Typical) (pF)：
80
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
2025+ |
TO-220F |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
ROHM |
16+ |
TO-220 |
100000 |
全新原裝現(xiàn)貨 |
詢價 | ||
NEC |
24+ |
TO-220F |
32 |
詢價 | |||
NEC |
20+ |
TO220 |
20500 |
汽車電子原裝主營-可開原型號增稅票 |
詢價 | ||
NEC |
2447 |
TO-220F |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEC |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NEC |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
NEC |
46+ |
TO-220F |
1800 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
NEC |
23+ |
TO-220F |
2463 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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