| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) 文件:35.4 Kbytes 頁數(shù):7 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon NPN Triple Diffused Type Transistor Silicon NPN Triple Diffused Type Transistor 文件:40.29 Kbytes 頁數(shù):1 Pages | KEXIN 科信電子 | KEXIN | ||
Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) ? High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) ? Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS ? High power switching applications. ? Hammer driv 文件:128.71 Kbytes 頁數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220F package ? DARLINGTON ? High DC current gain ? Low collector saturation voltage APPLICATIONS ? Switching applications ? Hammer drive ,pulse motor drive applications 文件:217.49 Kbytes 頁數(shù):3 Pages | SAVANTIC | SAVANTIC | ||
TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications ? High DC current gain: hFE = 1500 (min) (VCE = ?3 V, IC = ?1 A) ? Low saturation voltage: VCE (sat) = ?1.5 V (max) (IC = ?1 A) 文件:200.29 Kbytes 頁數(shù):4 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) ? High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) ? Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS ? High power switching applications. ? Hammer driv 文件:242.82 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) 文件:100.53 Kbytes 頁數(shù):5 Pages | UTC 友順 | UTC | ||
PNP EPITAXIAL PLANAR TRANSISTOR Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 文件:249.13 Kbytes 頁數(shù):4 Pages | WEITRON | WEITRON | ||
絲印:TL;Package:CPT3;Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. 文件:107.17 Kbytes 頁數(shù):5 Pages | ROHM 羅姆 | ROHM | ||
PNP Silicon Low Frequency Transistor Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118 文件:209.53 Kbytes 頁數(shù):3 Pages | SECOS 喜可士 | SECOS |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
開關(guān)管 (S)_功率放大 (L)
- 封裝形式:
直插封裝
- 極限工作電壓:
60V
- 最大電流允許值:
3A
- 最大工作頻率:
5MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
BD936F,2SB1015,2SB1094,2SB1375,
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號(hào):
B-10
- vtest:
60
- htest:
5000000
- atest:
3
- wtest:
0
技術(shù)參數(shù)
- Vcbo (V):
-60
- VCEO (V):
-60
- Vebo (V):
-7
- IC @25 °C (A):
-3
- VCE (sat) (V):
-1
- hFE:
100-400
- Pc (W):
25
- fT (Typical) (GHz):
0.005
- Cob (Typical) (pF):
80
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
2025+ |
TO-220F |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢價(jià) | ||
ROHM |
16+ |
TO-220 |
100000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
NEC |
24+ |
TO-220F |
32 |
詢價(jià) | |||
NEC |
20+ |
TO220 |
20500 |
汽車電子原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
NEC |
2447 |
TO-220F |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
NEC |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NEC |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
NEC |
46+ |
TO-220F |
1800 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
NEC |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
NEC |
23+ |
TO-220F |
2463 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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