| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ? 2SB139060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ? Low power losses, high efficiency; ? Guard ring construction for transient protection; ? High ESD capability; ? High surge capability; ? Packaged products are widely use 文件：17.83 Kbytes 頁數(shù)：1 Pages | SILAN 士蘭微 | SILAN | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220Fa package ? High DC current gain ? Low collector saturation voltage ? DARLINGTON APPLICATIONS ? For power switching applications 文件：128.759 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Triple Diffused Application Power switching 文件：35.77 Kbytes 頁數(shù)：6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220Fa package ? High DC current gain ? Low collector saturation voltage ? DARLINGTON APPLICATIONS ? For power switching applications 文件：95.86 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ? 2SB139100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ? Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera 文件：20.3 Kbytes 頁數(shù)：1 Pages | SILAN 士蘭微 | SILAN | ||
Power Bipolar Transistors
文件：55.8 Kbytes 頁數(shù)：2 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
isc Silicon PNP Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ? Good Linearity of hFE APPLICATIONS ? Designed for low frequency power amplifier applications. 文件：250.8 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION ? With TO-220Fa package ? Low collector saturation voltage ? Wide area of safe operation APPLICATIONS ? For low frequency power amplifier applications 文件：122.37 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Triple Diffused Application Low frequency power amplifier 文件：32.95 Kbytes 頁數(shù)：5 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A ■ Features ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one 文件：46.68 Kbytes 頁數(shù)：2 Pages | PANASONIC 松下 | PANASONIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質：
低頻或音頻放大 （LF）_開關管 （S）
- 封裝形式：
直插封裝
- 極限工作電壓：
20V
- 最大電流允許值：
3A
- 最大工作頻率：
140MHZ
- 引腳數(shù)：
3
- 可代換的型號：
2SA1296,2SB893,2SB976,2SB985,2SB1117,2SB1505,
- 最大耗散功率：
0.75W
- 放大倍數(shù)：
- 圖片代號：
A-20
- vtest：
20
- htest：
140000000
- atest：
3
- wtest：
0.75
技術參數(shù)
- VCEO (V)：
16
- hFE min.：
135
- hFE max.：
600
- Pc (W)：
0.75
- Production Status：
EOL
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ROHM |
24+ |
30000 |
詢價 | ||||
NEC |
2447 |
TO-92 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEC |
24+ |
TO-92 |
5000 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價 | ||
NEC |
24+ |
原廠封裝 |
770 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NEC |
24+ |
8858 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
SOT-89 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
NEC |
1922+ |
SOT-89 |
35689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
NEC |
23+ |
SOT-89 |
16238 |
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
RENESAS/瑞薩 |
20+ |
SOT-89 |
120000 |
只做原裝 可免費提供樣品 |
詢價 |
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