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                >2SA19>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          2SA1972
          TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)
          
High-Voltage Switching Applications
? High breakdown voltage: VCEO = ?400 V
          文件：152.91 Kbytes 頁(yè)數(shù)：3 Pages
          TOSHIBA
          東芝
          

          2SA1973
          DC/DC Converter Applications
          
DC/DC Converter Applications
Features
? Adoption of FBET, MBIT processes.
? Large current capacitance.
? Low collector-to-emitter saturation voltage.
? High-speed switching.
? Ultrasmall package facilitates miniaturization in end products.
          文件：44.58 Kbytes 頁(yè)數(shù)：4 Pages
          SANYO
          三洋
          

          2SA1977
          PNP EPITAXIAL SILICON TRANSISTOR
          
FEATURES
? High fT
   fT = 8.5 GHz TYP.
? High gain
   | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = ?8 V, IC = ?20 mA
? High-speed switching characterstics
? Equivalent NPN transistor is the NE68133 / 2SC3583.
          文件：1.45866 Mbytes 頁(yè)數(shù)：12 Pages
          CEL
          

          2SA1977
          PNP Epitaxial Silicon Transistor
          
Features
● High fT :fT = 8.5 GHz TYP.
● High gain
   | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA
● High-speed switching characterstics
          文件：36.54 Kbytes 頁(yè)數(shù)：1 Pages
          KEXIN
          科信電子
          

          2SA1977
          PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
          
FEATURES
? High fT
   fT = 8.5 GHz TYP.
? High gain
   | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = ?8 V, IC = ?20 mA
? High-speed switching characterstics
? Equivalent NPN transistor is the 2SC3583.
          文件：58.63 Kbytes 頁(yè)數(shù)：7 Pages
          NEC
          瑞薩
          

          2SA1978
          PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
          
FEATURES
? High fT
           fT = 5.5 GHz TYP.
? | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = ?10 V, IC = ?15 mA
? High speed switching characteristics
? Equivalent NPN transistor is the 2SC2351.
? Alternative of the 2SA1424.
          文件：60.21 Kbytes 頁(yè)數(shù)：5 Pages
          NEC
          瑞薩
          

          2SA1978
          PNP Eitaxial Silicon Transistor
          
Features
● High fT (fT=5.5GHz TYP).
● High gain |S21e|2 =10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA
● High-speed switching characterstics
          文件：36.61 Kbytes 頁(yè)數(shù)：1 Pages
          KEXIN
          科信電子
          

          2SA1978
          PNP EPITAXIAL SILICON TRANSISTOR
          
FEATURES
? High fT
   fT = 5.5 GHz TYP.
? | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = ?10 V, IC = ?15 mA
? High speed switching characteristics
? Equivalent NPN transistor is the NE02133 / 2SC2351.
? Alternative of the 2SA1424.
          文件：1.42336 Mbytes 頁(yè)數(shù)：10 Pages
          CEL
          

          2SA1979
          PNP Silicon Transistor (Medium power amplifier)
          
Description
? Medium power amplifier
Features
? Large collector current : ICMax=-500mA
? Suitable for low-Voltage operation because of its low saturation voltage
? Complementary pair with 2SC5342
          文件：239.94 Kbytes 頁(yè)數(shù)：4 Pages
          AUK
          

          2SA1979M
          PNP Silicon Transistor (Medium power amplifier)
          
Description
? Medium power amplifier
Features
? Large collector current : ICMax=-500mA
? Suitable for low-Voltage operation because of its low saturation voltage
? Complementary pair with 2SC5342M
          文件：231.82 Kbytes 頁(yè)數(shù)：4 Pages
          AUK
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • NPN/PNP：
            PNP
          • Vcbo (V)：
            -200
          • VCEO (V)：
            -200
          • Vebo (V)：
            -5
          • IC (A) @25 °C：
            -7
          • VCE(sat) (V) max.：
            -2
          • hFE min.：
            70
          • hFE max.：
            200
          • Pc (W)：
            100
          • fT (MHz) typ.：
            40
          • Cob (pF) typ.：
            270
          • Package Type：
            MP-88
          • Production Status：
            EOL
          
            
          
        
          
            
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