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          首頁 >2SA16>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SA1615

          isc Silicon PNP Power Transistor

          DESCRIPTION ? Large current capacity:IC(DC)= -10A IC(pulse)=-15A ? High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

          文件:236.12 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SA1615

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

          文件:323.37 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1615

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

          文件:304.31 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1615

          PNP Silicon Epitaxial Transistor for High-speed Switching

          FEATURES ● Large current capacity: IC(DC):-10A,IC(pulse):-15A. ● High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

          文件:266.31 Kbytes 頁數(shù):5 Pages

          BILIN

          銀河微電

          2SA1615

          TO-251-3L Plastic-Encapsulate Transistors

          TRANSISTOR (PNP) FEATURES ● Large Current Capacity ● High hFE and Low Collector Saturation Voltage

          文件:220.73 Kbytes 頁數(shù):2 Pages

          JIANGSU

          長電科技

          2SA1615

          P TYPE TTANSISTORS

          P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

          文件:187.76 Kbytes 頁數(shù):4 Pages

          STANSON

          司坦森

          2SA1615-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

          文件:323.37 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1615-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

          文件:304.31 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1615-Z

          isc Silicon PNP Power Transistor

          DESCRIPTION ? Large current capacity:IC(DC)= -10A IC(pulse)=-15A ? High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

          文件:240.04 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SA1615-Z

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

          PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES ? Large current capacity: IC

          文件:118.88 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          晶體管資料

          • 型號:

            2SA1626

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-PNP

          • 性質(zhì):

            低頻或音頻放大 (LF)_開關管 (S)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            400V

          • 最大電流允許值:

            2A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            2SA1412,2SA1786,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號:

            A-68

          • vtest:

            400

          • htest:

            999900

          • atest:

            2

          • wtest:

            1

          技術參數(shù)

          • VCEO (V):

            400

          • hFE min.:

            40

          • hFE max.:

            120

          • Pc (W):

            1

          • Production Status:

            EOL

          供應商型號品牌批號封裝庫存備注價格
          24+
          60000
          詢價
          NEC
          24+
          原廠封裝
          3500
          原裝現(xiàn)貨假一罰十
          詢價
          NEC
          24+
          8858
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          NEC
          24+
          6540
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          22+
          100000
          代理渠道/只做原裝/可含稅
          詢價
          23+
          斜頭管
          4000
          正品原裝貨價格低
          詢價
          HGF
          23+
          TO-92L
          7600
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          NEC
          23+
          TO-92L
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          NEC
          23+
          TO-92L
          4095
          原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
          詢價
          NEC
          NA
          8560
          一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
          詢價
          更多2SA16供應商 更新時間2026-1-19 16:30:00
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