| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SA1615 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES ? Large current capacity: IC 文件:118.88 Kbytes 頁(yè)數(shù):6 Pages | NEC 瑞薩 | NEC | |
2SA1615 | SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES ? Large current 文件:238.5 Kbytes 頁(yè)數(shù):7 Pages | RENESAS 瑞薩 | RENESAS | |
2SA1615 | PNP Silicon Epitaxial Transistor for High-speed Switching FEATURES ● Large current capacity: IC(DC):-10A,IC(pulse):-15A. ● High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A) 文件:266.31 Kbytes 頁(yè)數(shù):5 Pages | BILIN 銀河微電 | BILIN | |
2SA1615 | isc Silicon PNP Power Transistor DESCRIPTION ? Large current capacity:IC(DC)= -10A IC(pulse)=-15A ? High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APP 文件:236.12 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
2SA1615 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency 文件:323.37 Kbytes 頁(yè)數(shù):3 Pages | ISC 無(wú)錫固電 | ISC | |
2SA1615 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency 文件:304.31 Kbytes 頁(yè)數(shù):3 Pages | ISC 無(wú)錫固電 | ISC | |
2SA1615 | TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Large Current Capacity ● High hFE and Low Collector Saturation Voltage 文件:220.73 Kbytes 頁(yè)數(shù):2 Pages | JIANGSU 長(zhǎng)電科技 | JIANGSU | |
2SA1615 | P TYPE TTANSISTORS P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and 文件:187.76 Kbytes 頁(yè)數(shù):4 Pages | STANSON 司坦森 | STANSON | |
2SA1615 | Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. ? Large current capacity: IC(DC) = ?10 A, IC(pulse) = ?15 A\n? High hFE and low collector saturation voltage: hFE = 200 MIN. (VCE = ?2.0 V, IC = ?0.5 A) VCE(sat) ≤ ?0.25 V (IC = ?4.0 A, IB = ?0.05 A); | Renesas 瑞薩 | Renesas | |
2SA1615 | 晶體管 | JSCJ 長(zhǎng)晶科技 | JSCJ |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
高速開(kāi)關(guān) (SS)_功率放大 (L)
- 封裝形式:
- 極限工作電壓:
30V
- 最大電流允許值:
10A
- 最大工作頻率:
180MHZ
- 引腳數(shù):
- 可代換的型號(hào):
2SB936,
- 最大耗散功率:
15W
- 放大倍數(shù):
- 圖片代號(hào):
NO
- vtest:
30
- htest:
180000000
- atest:
10
- wtest:
15
技術(shù)參數(shù)
- Vcbo (V):
-30
- VCEO (V):
-20
- Vebo (V):
-10
- IC @25 °C (A):
-10
- VCE (sat) (V):
-0.25
- hFE:
200-600
- Pc (W):
15
- fT (Typical) (GHz):
0.18
- Cob (Typical) (pF):
220
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS |
TO252 |
30000000 |
原裝進(jìn)口中國(guó)百?gòu)?qiáng)元器件分銷(xiāo)企業(yè) 專(zhuān)注RENESAS十年 公司大量RENESAS現(xiàn)貨 歡迎您的咨詢(xún) 百年不變 服務(wù)至上 |
詢(xún)價(jià) | |||
NEC |
24+ |
TO-252 |
86200 |
新進(jìn)庫(kù)存/原裝 |
詢(xún)價(jià) | ||
NEC |
12+ |
TO-251 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | ||
NEC |
24+ |
原廠封裝 |
3500 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
NEC |
24+ |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | |||
NEC |
23+ |
TO-252 |
20000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
NEC |
2016+ |
TO-251 |
4000 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
NEC |
25+ |
SOT252 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電 |
詢(xún)價(jià) | ||
NEC |
18+ |
TO-252 |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢(xún)價(jià) | ||
NEC |
98 |
720 |
原裝正品 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- AIP5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- 4TPE330MW
相關(guān)庫(kù)存
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- 4TPE330M

