N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Cap

文件：203.34 Kbytes 頁數(shù)：4 Pages

UTC

友順

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOD-323；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：504.36 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚杰電子

380mA N-channel Small Signal MOSFET-60V

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? This is a Pb?Free Device ? We declare that the material of product are Halogen Free and compliance with RoHS requirements. ? S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requi

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WILLAS

威倫電子

60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：162.95 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：131.18 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

N-Ch Small Signal MOSFET with ESD Protection

文件：533.04 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士

N溝道增強模型場效應(yīng)晶體管

?低導(dǎo)通電阻\n?低柵極閾值電壓\n?低輸入電容\n?快速開關(guān)速度\n?低輸入/輸出泄漏\n?超小型表面貼裝封裝\n?針對JESD22 A114，ESD HBM=1000V，針對JESD22 C101，ESD CDM=1500V;

ONSEMI

安森美半導(dǎo)體

MV MOSFET

Panjit

強茂

Small Signal MOSFETS

MCC

美微科