| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT |
技術(shù)參數(shù)
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.3 A
- PD @ TA = +25°C：
0.35 W
- RDS(ON) Max @ VGS (10V)：
2000 mΩ
- RDS(ON) Max @ VGS (4.5V)：
3000 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2.5 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT23
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT-23 |
38963 |
FAIRCHILD/仙童全新特價2N7002K即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
Diodes |
24+ |
SOT23 |
21000 |
只做原正品!假一賠十公司現(xiàn)貨 |
詢價 | ||
AP |
24+ |
SOT23-3 |
9700 |
絕對原裝正品現(xiàn)貨假一罰十 |
詢價 | ||
CJ/長電 |
23+ |
SOT-23 |
32078 |
10年以上分銷商,原裝進口件,服務(wù)型企業(yè) |
詢價 | ||
H-DIODE海德 |
25+ |
- |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
群鑫 |
22+ |
SOT23 |
30000 |
原裝正品 一級代理 |
詢價 | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-23 |
3600 |
原裝正品 可含稅交易 |
詢價 | ||
CJ/長電 |
2021+ |
SOT-23(SOT-23-3) |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
SILIKRON |
22+23+ |
SOT-23 |
85192 |
代理假一罰十全新原裝現(xiàn)貨可送貨 |
詢價 | ||
Diodes(美臺) |
24+ |
7694 |
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨 |
詢價 |
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