絲印：7002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

文件：531.93 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

Logic N-Channel MOSFET

General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. Features ■ RDS(on) (Max 7.5? )@VGS=10V RDS(on) (Max 7.5? )@VGS=4.5V ■ Gate Charge (Typical

文件：699.21 Kbytes 頁數(shù)：6 Pages

SEMIWELL

矽門微

Small Signal MOSFET N-Channel

Features: *Low On-Resistance : 3 *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns

文件：473.01 Kbytes 頁數(shù)：4 Pages

WEITRON

絲?。?a target="_blank" title="Marking" href="/3p/marking.html">3P；Package：SOT-23；Small Signal MOSFET Transistor

Small Signal MOSFET Transistor FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

文件：226.69 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

N-CHANNEL TRANSISTOR

Description The MTN7002N2 is a N-channel enhancement-mode MOS transistor. Drain-Sourse Voltage BVDSS 60 V Drain-Gate Voltage (RGS=1M:) BVDSS 60 V Gate-Source Voltage VGS +/-40 V Continuous Drain Current (Ta=25℃) ID 200 *1 mA Continuous Drain Current (Ta=100℃) ID 115 *1 mA Pulsed Drain Curre

文件：88 Kbytes 頁數(shù)：3 Pages

COMCHIP

典琦

TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

文件：228.66 Kbytes 頁數(shù)：1 Pages

DCCOM

道全

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Voltage - 60 Volts Drain Curreent - 115 mAmps FEATURES ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected :1000V MECHANICAL DATA ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammabili

文件：1.37434 Mbytes 頁數(shù)：3 Pages

DIOTECH

MOSFET (N-Channel)

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.5438 Mbytes 頁數(shù)：5 Pages

JIANGSU

長電科技

N-Channel MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW

文件：43.36 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲印：F2；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.20175 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子