| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES ? High density cell design for low RDS(ON). ? Voltage controolled small signal switch. ? Rugged and reliable. ? High saturation current capablity. 文件:67.07 Kbytes 頁(yè)數(shù):4 Pages | KEC KEC(Korea Electronics) | KEC | ||
Advanced Small Signal MOSFET BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability 文件:85.23 Kbytes 頁(yè)數(shù):3 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
絲?。?a target="_blank" title="Marking" href="/2n7000/marking.html">2N7000;Package:TO-92;N-Channel Enhancement Mode Field Effect Transistor Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products 文件:372.34 Kbytes 頁(yè)數(shù):13 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/2n7000/marking.html">2N7000;Package:TO-92;N-Channel Enhancement Mode Field Effect Transistor Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products 文件:372.34 Kbytes 頁(yè)數(shù):13 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/2n7000/marking.html">2N7000;Package:TO-92;N-Channel Enhancement Mode Field Effect Transistor Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products 文件:372.34 Kbytes 頁(yè)數(shù):13 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Small Signal MOSFET 200 mAmps, 60 Volts Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 Features ? Pb?Free Packages are Available* 文件:92.5 Kbytes 頁(yè)數(shù):4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark 文件:383.82 Kbytes 頁(yè)數(shù):14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V. ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capablity. 文件:72.58 Kbytes 頁(yè)數(shù):4 Pages | KEC KEC(Korea Electronics) | KEC | ||
N-Channel 60-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? ESD Protected: 2000 V APPLICATIONS ? Direct Logic-Level Interface: TTL/CMOS ? Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, ?? Display, Memories, Transistors, etc. ? Battery Operated Systems 文件:73.25 Kbytes 頁(yè)數(shù):4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel 60-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? ESD Protected: 2000 V APPLICATIONS ? Direct Logic-Level Interface: TTL/CMOS ? Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, ?? Display, Memories, Transistors, etc. ? Battery Operated Systems 文件:73.25 Kbytes 頁(yè)數(shù):4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Ge-PNP
- 性質(zhì):
調(diào)幅 (AM)_調(diào)頻 (FM)
- 封裝形式:
直插封裝
- 極限工作電壓:
25V
- 最大電流允許值:
0.05A
- 最大工作頻率:
800MHZ
- 引腳數(shù):
4
- 可代換的型號(hào):
AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,
- 最大耗散功率:
0.075W
- 放大倍數(shù):
- 圖片代號(hào):
D-13
- vtest:
25
- htest:
800000000
- atest:
0.05
- wtest:
0.075
技術(shù)參數(shù)
- Vdss(V):
700
- Vgss(V):
30
- Id(A):
2
- Package:
TO-220TO-220FTO-...
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FSC |
25+23+ |
TO-220 |
25565 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
UTC/友順 |
2022+ |
TO-220F |
7500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
UTC/友順 |
20+ |
TO-220F |
7500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) | ||
24+ |
N/A |
69000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
VISHAY |
25+ |
SOT23-3 |
1560 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢 |
詢價(jià) | ||
PH |
23+ |
SOT23 |
50000 |
全新原裝環(huán)保倉(cāng)庫(kù)現(xiàn)貨 |
詢價(jià) | ||
SILIC |
10+ |
DIP-4 |
7800 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
恩XP |
SOT-23 |
27000 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
DIODES |
01+ |
SOT23 |
1200 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) |
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