| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/7k/marking.html">7K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input / Output Leakage ? Ultra-Small Surface Mount Package ? Pb Free / RoHS Compliant ? ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD2 文件：224.26 Kbytes 頁數(shù)：6 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
絲?。?a target="_blank" title="Marking" href="/704/marking.html">704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N??hannel, SOT??3 Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications 文件：106.85 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/7k/marking.html">7K***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the 文件：233.86 Kbytes 頁數(shù)：3 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot 文件：164.63 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | ||
N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V. ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capablity. 文件：74.38 Kbytes 頁數(shù)：4 Pages | KEC KEC(Korea Electronics) | KEC | ||
N-Channel 60-V (D-S) MOSFET 文件：64.519 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel 60-V (D-S) MOSFET 文件：68.91 Kbytes 頁數(shù)：7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel 60-V (D-S) MOSFET 文件：64.519 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Small Signal MOSFET 200 mAmps, 60 Volts N??hannel TO??2 200 mAMPS 60 VOLTS 文件：57.66 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
COLOUR TELEVISION 文件：6.0518 Mbytes 頁數(shù)：70 Pages | TOSHIBA 東芝 | TOSHIBA |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Ge-PNP
- 性質(zhì)：
調(diào)幅 （AM）_調(diào)頻 （FM）
- 封裝形式：
直插封裝
- 極限工作電壓：
25V
- 最大電流允許值：
0.05A
- 最大工作頻率：
800MHZ
- 引腳數(shù)：
4
- 可代換的型號：
AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,
- 最大耗散功率：
0.075W
- 放大倍數(shù)：
- 圖片代號：
D-13
- vtest：
25
- htest：
800000000
- atest：
0.05
- wtest：
0.075
技術(shù)參數(shù)
- Vdss(V)：
700
- Vgss(V)：
30
- Id(A)：
2
- Package：
TO-220TO-220FTO-...
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FSC |
25+23+ |
TO-220 |
25565 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
UTC/友順 |
2022+ |
TO-220F |
7500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
UTC/友順 |
20+ |
TO-220F |
7500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
INFINOEN |
25+ |
SOT23-3 |
90000 |
一級代理進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
DIODES |
24+ |
SOT323 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
恩XP |
23+ |
NA |
2860 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
恩XP |
23+ |
SOT23 |
5628 |
原廠原裝 |
詢價 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢更多詳細信息, |
詢價 |
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