| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc?to?dc converters, inverters, or for inductive loads requiring higher safe oper 文件：143.21 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
N-P-N SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR 文件：125.3 Kbytes 頁數(shù)：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Bipolar NPN Device in a Hermetically sealed Bipolar NPN Device. VCEO = 60V IC = 15A 文件：14.67 Kbytes 頁數(shù)：1 Pages | SEME-LAB | SEME-LAB | ||
Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general?purpose switching and amplifier applications. Features ? DC Current Gain ? hFE = 20?70 @ IC = 4 Adc ? Collector?Emitter Saturation Voltage ?VCE(sat 文件：81.17 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general?purpose switching and amplifier applications. Features ? DC Current Gain ? hFE = 20?70 @ IC = 4 Adc ? Collector?Emitter Saturation Voltage ?VCE(sat 文件：71.17 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general?purpose switching and amplifier applications. Features ? DC Current Gain ? hFE = 20?70 @ IC = 4 Adc ? Collector?Emitter Saturation Voltage ?VCE(sat 文件：81.17 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. 文件：152.31 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
SILICON N-P-N GENERAL - PURPOSE SILICON NPN GENERAL PURPOSE 2N3055 are Homataxial-base type useful for power switching circuits, for series- and shunt-regulator driver and output stages, and for high-fidelity amplifiers. 文件：84.97 Kbytes 頁數(shù)：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
NPN POWER TRANSISTOR Switching Regulator and Power Amplifier Applications TO-3 Metal Can Package 文件：246.05 Kbytes 頁數(shù)：4 Pages | CDIL | CDIL | ||
TO-3 Power Package Transistors (NPN) TO-3 Power Package Transistors (NPN) 文件：40.46 Kbytes 頁數(shù)：1 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
F-Thy
- 性質(zhì)：
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
0.5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BRX44BRX51,TAG60A,TAG62A,TAG64A,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
C-78
- vtest：
100
- htest：
999900
- atest：
0.5
- wtest：
0
詳細參數(shù)
- 型號：
2N30
- 制造商：
Microsemi Corporation
- 功能描述：
THYRISTOR SCR 100V 8A 3PIN TO-18 - Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
CAN |
7000 |
詢價 | ||||
MOT |
24+ |
CAN3 |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
MOTOROLA |
專業(yè)鐵帽 |
CAN3 |
100 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
CAN3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
MOT |
24+ |
CAN3 |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
MOT |
2023+ |
CAN |
50000 |
全新原裝現(xiàn)貨 |
詢價 | ||
MOTOROLA |
24+ |
CAN3 |
1200 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ST |
23+ |
CAN to-39 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
25+ |
CAN to-39 |
16900 |
原裝，請咨詢 |
詢價 | ||
ST |
2511 |
CAN to-39 |
16900 |
電子元器件采購降本30%!原廠直采,砍掉中間差價 |
詢價 |
