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          首頁(yè) >2N30>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N3055

          Silicon NPN Power Transistors

          DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier

          文件:151.46 Kbytes 頁(yè)數(shù):4 Pages

          SAVANTIC

          2N3055

          Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

          Bipolar NPN Device. VCEO = 100V IC = 15A

          文件:14.39 Kbytes 頁(yè)數(shù):1 Pages

          SEME-LAB

          2N3055

          NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

          NPN Transistor for Powerful AF Output Stage 2 N 3055 is a single diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in stabilized power supply units.

          文件:83.79 Kbytes 頁(yè)數(shù):4 Pages

          SIEMENS

          西門(mén)子

          2N3055

          Silicon NPN Power Transistor

          DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications

          文件:146.26 Kbytes 頁(yè)數(shù):3 Pages

          TGS

          2N3055

          Silicon NPN Power Transistor

          DESCRIPTION ◇Excellent Safe Operating Area ◇DC Current Gain-hFE=20-70@IC = 4A ◇Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC = 4A ◇Complement to Type 2N2955 APPLICATIONS ◇Designed for general-purpose switching and amplifierapplications

          文件:872.36 Kbytes 頁(yè)數(shù):2 Pages

          LUGUANG

          魯光電子

          2N3055

          NPN Transistor Bare Die

          Features Collector current up to 15A High DC Current Gain, hFE = 20-70 @ IC = 4A Low VCE(sat) = 1.1V Max @ IC = 4A Solderable back metal High Reliability tested grades for Military + Space

          文件:230.49 Kbytes 頁(yè)數(shù):2 Pages

          SS

          2N3055

          COMPLEMENTARY SILICON POWER TRANSISTORS

          Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

          文件:47.01 Kbytes 頁(yè)數(shù):4 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          2N3055

          Complementary Silicon power transistors

          DESCRIPTION The 2N3055 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits, and shunt regulators, output stages and amplifiers. series fidelity amplifiers The complementary PNP type is MJ2955. FEATURES Design

          文件:225.47 Kbytes 頁(yè)數(shù):4 Pages

          NELLSEMI

          尼爾半導(dǎo)體

          2N3055

          COMPLEMENTARY SILICON POWER TRANSISTORS

          DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955.

          文件:85.41 Kbytes 頁(yè)數(shù):3 Pages

          SYC

          2N3055..

          Transistor NPN, TO-3

          Features: ?Power dissipation - Pd = 115W at Tc = 25°C ?DC current gain hFE = 20 ~ 70 at Ic = 4A ?VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA ?Designed for use in general-purpose amplifier and switching applications

          文件:404.66 Kbytes 頁(yè)數(shù):4 Pages

          MULTICOMP

          易絡(luò)盟

          晶體管資料

          • 型號(hào):

            2N3029

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            F-Thy

          • 性質(zhì):

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            100V

          • 最大電流允許值:

            0.5A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BRX44BRX51,TAG60A,TAG62A,TAG64A,

          • 最大耗散功率:

          • 放大倍數(shù):

          • 圖片代號(hào):

            C-78

          • vtest:

            100

          • htest:

            999900

          • atest:

            0.5

          • wtest:

            0

          詳細(xì)參數(shù)

          • 型號(hào):

            2N30

          • 制造商:

            Microsemi Corporation

          • 功能描述:

            THYRISTOR SCR 100V 8A 3PIN TO-18 - Bulk

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          更多2N30供應(yīng)商 更新時(shí)間2026-1-21 10:50:00
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