絲?。?strong>2N3；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 頁數(shù)：16 Pages

TOSHIBA

東芝

絲印：2N3810K1；Package：Flat-8；Rad-Hard 60 V, 0.05 A PNP dual matched transistor

Features ? Hermetic packages ? ESCC and JANS qualified ? Up to 100 krad(Si) low dose rate Description 2N3810K and SOC3810HR are silicon planar PNP dual matched transistors packaged in Flat-8 and LCC-6 respectively and available in 100 krad versions. They are specifically designed for aero

文件：359.79 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/2n3828/marking.html">2N3828；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features General Purpose Amplifier Transistor

文件：1.41012 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：2N3828；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features General Purpose Amplifier Transistor

文件：1.41012 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/2n3904/marking.html">2N3904；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904

文件：1.75489 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲印：2N3904；Package：TO-92；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

文件：464.96 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/2n3904/marking.html">2N3904；Package：TO-92；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

文件：464.96 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/2n3904/marking.html">2N3904；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904

文件：1.75489 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲印：2N3904；Package：TO-92；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

文件：464.96 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導體

絲印：2N3904；Package：TO-92；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

文件：464.96 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導體