絲印：2N6；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 頁數(shù)：16 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/2n6193/marking.html">2N6193；Package：TO-39；SILICON PNP POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6193 MOD 1 is a silicon PNP power transistor designed for amplifier and switching applications.

文件：314.03 Kbytes 頁數(shù)：3 Pages

CENTRAL

絲?。?a target="_blank" title="Marking" href="/2n65/marking.html">2N65；Package：TO-252；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：2.5878 Mbytes 頁數(shù)：6 Pages

SY

順燁電子

絲印：2N65；Package：TO-252；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：2.5878 Mbytes 頁數(shù)：6 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/2n65/marking.html">2N65；Package：TO-252；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：2.5878 Mbytes 頁數(shù)：6 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/2n6517/marking.html">2N6517；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

文件：1.38427 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/2n6517/marking.html">2N6517；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

文件：1.38427 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：2N6520；Package：TO-92；TO-92 Plastic-Encapsulate PNP Transistors

FEATURES  Complement to 2N6517  High voltage. APPLICATIONS  High voltage control circuit application.

文件：1.62888 Mbytes 頁數(shù)：5 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/2n6520/marking.html">2N6520；Package：TO-92；TO-92 Plastic-Encapsulate PNP Transistors

FEATURES  Complement to 2N6517  High voltage. APPLICATIONS  High voltage control circuit application.

文件：1.62888 Mbytes 頁數(shù)：5 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/2n60/marking.html">2N60；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.00919 Mbytes 頁數(shù)：11 Pages

RECTRON

麗正國際