SI PNP LO-PWR BJT

Description: Si PNP Lo-Pwr BJT

文件：79.24 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

COLLECTOR TO BASE VOLTAGE

General Description The General Electric 2N2356 is a 5 terminal device containing two silicon NPN transistors and is intended for chopper applications. in the inverted connection.

文件：236.52 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

文件：88.66 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

文件：88.66 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

GERMANIUM POWER TRANSISTORS

4 AMP GERMANIUM PNP 5 AMP GERMANIUM PNP 6 AMP GERMANIUM PNP

文件：88.66 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Description: Ge PNP Lo-Pwr BJT

文件：94.28 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

文件：33.79 Kbytes 頁數(shù)：1 Pages

CENTRAL

Chip Type 2C2369A Geometry 0005 Polarity NPN

Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Features: ? High speed switching capabilities APPLICATIONS: Designed for high speed switching applications.

文件：30.43 Kbytes 頁數(shù)：1 Pages

SEMICOA

20 STERN AVE

SWITCHING TRANSISTORS NPN SILICON

文件：93.58 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

文件：219.34 Kbytes 頁數(shù)：3 Pages

CDIL