絲印：2N2；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.39 Kbytes 頁(yè)數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>2N2；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 頁(yè)數(shù)：16 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/2n2222a/marking.html">2N2222A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Feature complementary NPN Type available

文件：870.4 Kbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/2n2907a/marking.html">2N2907A；Package：T0-92；T0-92 Plastic-Encapsulate Transistors

FEATURES ? Complementary NPN Type available (MPS2222A)

文件：870.12 Kbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/2n20/marking.html">2N20；Package：SOT23-3；200V N-Channel Enhancement Mode MOSFET

文件：928.17 Kbytes 頁(yè)數(shù)：6 Pages

HMSEMI

華之美半導(dǎo)體

P-N-P GERMANIUM TRANSISTOR

P-N-P GERMANIUM TRANSISTOR

文件：108.6 Kbytes 頁(yè)數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

文件：267.79 Kbytes 頁(yè)數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

文件：267.79 Kbytes 頁(yè)數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

SCR, V(DRM) = 300 V TO 399.9 V

Description: SCR, V(DRM)= 300 V to 399.9 V

文件：80.28 Kbytes 頁(yè)數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

JEDEC TYPE NO. 2N2015

文件：166.44 Kbytes 頁(yè)數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司