| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>28NM60ND；Package：D2PAK；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T 文件：1.67094 Mbytes 頁數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：28NM60ND；Package：TO-220FP；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T 文件：1.67094 Mbytes 頁數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?strong>28NM60ND；Package：TO-220；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T 文件：1.67094 Mbytes 頁數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?strong>28NM60ND；Package：TO-247；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T 文件：1.67094 Mbytes 頁數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號：
28NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Rail/Tube
- 功能描述：
MOSFET N-CH 600V 24A TO-220AB
- 功能描述：
N-channel 600 V, 0.120 Ohm typ., 24 A, TO-220
- 功能描述：
N-channel 600 V 0 120 Ohm typ 24 A
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
STM |
21+ |
1000 |
TO-220-3 |
詢價 | |||
ST/意法半導(dǎo)體 |
22+ |
TO-220-3 |
6004 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價 | ||
ST |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
ST(意法半導(dǎo)體) |
25+ |
N/A |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
ST |
22+ |
TO-220-3 |
2000 |
原裝價優(yōu) |
詢價 | ||
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
ST |
23+ |
TO-220 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
ST原裝 |
25+23+ |
TO-220 |
23897 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
ST |
14+ |
TO-220 |
30416 |
進口管盒現(xiàn)貨/50 |
詢價 | ||
ST原裝 |
24+ |
TO-220 |
30980 |
原裝現(xiàn)貨/放心購買 |
詢價 |
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