絲印：25P；Package：SOT-23；PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE

文件：54.07 Kbytes 頁(yè)數(shù)：4 Pages

ZETEX

絲?。?a target="_blank" title="Marking" href="/25p06/marking.html">25P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The 25P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：506.24 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/25p03l/marking.html">25P03L；Package：TO-252；P-Channel -30V (D-S) MOSFET

PRODUCT SUMMARY VDS (V) = -30V RDS(ON)

文件：408.79 Kbytes 頁(yè)數(shù)：7 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/25p150/marking.html">25P150；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features Vps =-150V,Ip =-25A Rd(on)

文件：647.66 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲印：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature -60V,25A Rds (on)

文件：592.99 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲印：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature 60V-25A Rds(on)

文件：692.38 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/25p60/marking.html">25P60；Package：TO-252；P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.14507 Mbytes 頁(yè)數(shù)：7 Pages

RECTRON

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絲?。?a target="_blank" title="Marking" href="/25p60/marking.html">25P60；Package：TO-252；P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.45375 Mbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/25pc/marking.html">25PC；Package：SOT-23；REF4132-Q1 Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：1.33946 Mbytes 頁(yè)數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/25p30/marking.html">25P30；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

文件：238.25 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

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