絲印：231；Package：3LdSC-70；Ultra Low Power 3 Ld Voltage Supervisors in SC-70 and SOT-23 Packages

The ISL88001, ISL88002, ISL88003 supervisors are extremely low power 160nA voltage supervisors that help to monitor the power supply voltages in a wide variety of applications. By providing Power-On Reset and supply voltage supervision in small 3 Ld SC-70 and SOT-23 packages, the ISL88001, ISL8800

文件：547.01 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

絲印：231；Package：SOT-89-5-2；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ● Low Quiescent Current 5.5μA typ.(A version) 5.0μA typ.(B version) ● Operating Voltage 4.0V to 40V ● Operating Temperature Ta=-40 C to 125°C ● Output Voltage Accuracy VO 1.0(Ta=25 C) VO 2.0(Ta=-40 C to 125°C) ● Output Current IO(min.)=200mA ● ON/OFF Control A ver. only ● Corres

文件：786.88 Kbytes 頁數(shù)：21 Pages

NJRC

日本無線

絲印：231；Package：SOT23；1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Features Transient protection for high speed data lines to IEC 61000-4-2 (ESD) +15kV (air), +8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns)

文件：1.0107 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲印：2310；Package：SOT-23；MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 頁數(shù)：5 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/2312/marking.html">2312；Package：SOT-23；MOSFET

Features - Electrostatic sensitive devices. - AEC-Q101 Qualified. - Advanced trench process technology. - Lower on-resistance. - Reliable and rugged.

文件：480.65 Kbytes 頁數(shù)：5 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/2310/marking.html">2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE ? High power and current handing capabi

文件：754.42 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE ? High power and current handing capabi

文件：686.53 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/231/marking.html">231*；Package：SOT-23；1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.These devices are ideal for protecting systems with high data and clock rates or for circuits requiring l

文件：418.43 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/2312x/marking.html">2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2312X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON)

文件：323.88 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/2310/marking.html">2310；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =3A RDS(ON)

文件：305.66 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際