絲?。?strong>1J；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ? NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ? Especially suited for automatic insertion in thick- and thin-film circuits. ? These transistors are subdivided into three groups A, B and C according to their current gain. The typ

文件：301.49 Kbytes 頁數(shù)：6 Pages

GE

絲?。?strong>1J；Package：SOT-23；Epoxy meets UL-94 V-0 flammability rating

NPN Silicon Epitaxial Transistor for switching and amplifier applications

文件：595.99 Kbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>1J；Package：SOT-23；General Purpose Transistors

General Purpose Transistors NPN Silicon ? Moisture Sensitivity Level: 1 ? ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

文件：277.78 Kbytes 頁數(shù)：6 Pages

FS

絲?。?strong>1J；Package：SOT143B；NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲印：1J；Package：SOD-323；SMD Schottky Barrier Rectifiers

Features - Low profile surface mounted application in order to optimize board space. - Low power loss, high efficiency. - High current capability, low forward voltage drop. - High surge capability. - Guardring for overvoltage protection. - Very tiny plastic SMD package. - Ultra high-speed

文件：460.27 Kbytes 頁數(shù)：4 Pages

COMCHIP

典琦

絲?。?strong>1J；Package：SOD-123FL；STANDARD RECTIFIER

Features · For surface mounted applications · Glass passivated junction · Low profile package · Ideal for automated placement · High temperature soldering guaranteed: 260℃/10 seconds, at terminals

文件：481.16 Kbytes 頁數(shù)：2 Pages

DAESAN

絲印：1J；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 200mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：537.22 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

絲印：1J；Package：fS6；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

絲?。?strong>1J；Package：SOT-23-5；Rail-to-Rail Input,Push-Pull Output Low power CMOS Comparators

■FEATURES(V+=3V, V-=0V, Ta=25°C) ●Rail-to-Rail Input ●Push Pull Output ●Supply Current 6μA/ch typ. ●Propagation Delay 780ns typ. ●Operating Voltage 1.8 to 5.5V ●Input Offset Voltage 6mV max. ●Operating Temperature -40 to 125℃ ●Integrated EMI filter ●Package NJU77230 SOT-23-5, SC88A NJU7

文件：1.21452 Mbytes 頁數(shù)：25 Pages

NJRC

日本無線

絲?。?strong>1J；Package：SOD323；Low capacitance unidirectional ESD protection diode

1. General description Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits ?

文件：252.65 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世