絲印：11N；Package：SOT23LC；110V N-Channel Enhancement-Mode MOSFET VDS= 110V

文件：606.48 Kbytes 頁數(shù)：5 Pages

LRC

樂山無線電

絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep

文件：1.45034 Mbytes 頁數(shù)：21 Pages

RENESAS

瑞薩

絲印：11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep

文件：1.45034 Mbytes 頁數(shù)：21 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep

文件：1.45034 Mbytes 頁數(shù)：21 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep

文件：1.45034 Mbytes 頁數(shù)：21 Pages

RENESAS

瑞薩

絲印：11N08NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 80 V

Features ? N-channel ? Very low on-resistance RDS(on) ? Superior thermal resistance ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.74239 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/11n1lf2/marking.html">11N1LF2；Package：PG-TSDSON-8；OptiMOSTM 5 Linear FET 2, 100 V

Features ? Ideal for soft start in Power-over-Ethernet (PoE) application ? Very low on-resistance RDS(on) ? Wide safe operating area SOA ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.35377 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/11nv/marking.html">11NV；Package：VSSOP(DGK)；REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer

1 Features 1? Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C ? Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V ? Integrated ADC Drive Buffer – Low Output Impedance:

文件：1.94642 Mbytes 頁數(shù)：38 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/11nv/marking.html">11NV；Package：VSSOP(DGK)；REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer

1 Features 1? Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C ? Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V ? Integrated ADC Drive Buffer – Low Output Impedance:

文件：1.94642 Mbytes 頁數(shù)：38 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/11n60c2/marking.html">11N60C2；Package：P-TO220-3-31；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌