| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>11N；Package：SOT23LC；110V N-Channel Enhancement-Mode MOSFET VDS= 110V 文件：606.48 Kbytes 頁數(shù)：5 Pages | LRC 樂山無線電 | LRC | ||
絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep 文件：1.45034 Mbytes 頁數(shù)：21 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep 文件：1.45034 Mbytes 頁數(shù)：21 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep 文件：1.45034 Mbytes 頁數(shù)：21 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/11nbti/marking.html">11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz Features ? RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz ? 18.5dB typical gain at 2600MHz ? 0.55dB typical NF at 2600MHz ? +38.5dBm typical OIP3 at 2600MHz ? 50Ω Single-ended input/output impedances ? +5V power supply ? ICC = 45mA per channel ? Indep 文件：1.45034 Mbytes 頁數(shù)：21 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/11n08nm5/marking.html">11N08NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features ? N-channel ? Very low on-resistance RDS(on) ? Superior thermal resistance ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 文件：1.74239 Mbytes 頁數(shù)：13 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/11n1lf2/marking.html">11N1LF2；Package：PG-TSDSON-8；OptiMOSTM 5 Linear FET 2, 100 V Features ? Ideal for soft start in Power-over-Ethernet (PoE) application ? Very low on-resistance RDS(on) ? Wide safe operating area SOA ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 文件：1.35377 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/11nv/marking.html">11NV；Package：VSSOP(DGK)；REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer 1 Features 1? Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C ? Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V ? Integrated ADC Drive Buffer – Low Output Impedance: 文件：1.94642 Mbytes 頁數(shù)：38 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/11nv/marking.html">11NV；Package：VSSOP(DGK)；REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer 1 Features 1? Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C ? Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V ? Integrated ADC Drive Buffer – Low Output Impedance: 文件：1.94642 Mbytes 頁數(shù)：38 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/11n60c2/marking.html">11N60C2；Package：P-TO220-3-31；Cool MOS??Power Transistor Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances 文件：160.17 Kbytes 頁數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LRC |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
LRC樂山無線電 |
25 |
10000 |
全新原裝 |
詢價 | |||
LRC/樂山 |
22+ |
SOT23E |
20000 |
只做原裝 |
詢價 | ||
LRC/樂山 |
2447 |
SOT23 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ZETEX/DIODES美臺 |
23+ |
SOP-8 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
L3 Narda-MITEQ |
25+ |
- |
9350 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
NK/南科功率 |
2025+ |
DFN3333 |
986966 |
國產 |
詢價 | ||
LRC |
21+ |
QFN |
1000 |
上傳都是百分之百進口原裝現(xiàn)貨 |
詢價 |
相關芯片絲印
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- SMAF11
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- BQ25071QWDQCTQ1.A
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- MMSZ11VCWG
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相關庫存
更多- HGTG11N120CND
- SPB11N60C2
- SPA11N60C2
- SPA11N60C3
- SPA11N60C3E8185
- SPA11N60C3
- SPP11N60C3
- STFI11N60M2-EP
- SVS11N65FJHD2
- RM11N800T1
- NTMFSC011N08M7
- F0111EVB-3P5
- F0111NBTI8
- REF6041IDGKTG4.B
- REF6041IDGKR
- REF6041IDGKT
- NJU77550F
- NJU77551F
- TPS709A30DBVR
- TPS709A30DBVT
- TPS709A30DBVR
- TPS74901DRCR
- TPS74901DRCT
- TPS74901DRCRM3
- TPS709A33DBVT
- TPS709A33DBVR
- TPS709A33DBVR
- EL5211TILZ-T13
- TMP303DDRLR.A
- TMP303CDRLR
- TMP303CDRLT
- SMAF10A
- BQ25071QWDQCTQ1
- BQ25071QWDQCRQ1
- MMSZ11VBW
- BZT52C11
- MMSZ11VCW
- MMSZ11VCWG
- CMSZDA30V
- CMSZDA30V
- BZV49-C11
- BZV49-C11
- SZ1110A
- SZ1110A
- DTA123EE
