絲?。?strong>1111；Package：SOD882D；Ultra low capacitance unidirectional ESD protection diode

1. General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package

文件：227.54 Kbytes 頁(yè)數(shù)：11 Pages

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絲?。?strong>1111；Package：DFN1006D-2；Ultra low capacitance unidirectional ESD protection diode

1. General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package

文件：230.38 Kbytes 頁(yè)數(shù)：11 Pages

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絲?。?strong>1111；Package：SOD882D；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：295.55 Kbytes 頁(yè)數(shù)：12 Pages

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絲?。?strong>1111；Package：DFN1006D-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：298.22 Kbytes 頁(yè)數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/111100/marking.html">111100；Package：DFN1010D-3；60 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. 2. Features and benefits ? Very low collector-

文件：731.42 Kbytes 頁(yè)數(shù)：17 Pages

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絲?。?a target="_blank" title="Marking" href="/111110/marking.html">111110；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? AEC-Q101 qualified ? Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.79537 Mbytes 頁(yè)數(shù)：22 Pages

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絲?。?a target="_blank" title="Marking" href="/111101/marking.html">111101；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? AEC-Q101 qualified ? Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.75961 Mbytes 頁(yè)數(shù)：22 Pages

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絲?。?a target="_blank" title="Marking" href="/111101/marking.html">111101；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

General description 100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ Reduced pick and place costs

文件：2.76058 Mbytes 頁(yè)數(shù)：22 Pages

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絲印：11111010；Package：DFN1006D-2；60 V, 0.2 A low VF MEGA Schottky barrier rectifier

文件：704.39 Kbytes 頁(yè)數(shù)：14 Pages

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10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES ? High speed parallel registers with positive edge-triggered D-type flip-flops ? Ideal where high speed, light loading, or increased fan-in

文件：69.55 Kbytes 頁(yè)數(shù)：6 Pages

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