絲印：111100；Package：DFN1010D-3；60 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. 2. Features and benefits ? Very low collector-

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NEXPERIA

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60 V, 2 A NPN low VCEsat (BISS) transistor

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恩XP

60 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n PNP complement: PBSS5260QA. ? Very low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain hFE at high IC\n? High energy efficiency due to less heat generation\n? Reduced Printed-Circuit Board (PCB) area requirements\n? Solderable side pads\n? AEC-Q101 qual;

Nexperia

安世

Package：3-XDFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 60V 2A DFN1010D-3

Nexperia USA Inc.