絲?。?strong>10L；Package：SOD-123FL；Schottky Barrier Rectifiers, Surface Mount, 1 A, 50 V - 150 V

Features ? Low Power Loss, High Efficiency ? Guard Ring for Overvoltage Protection ? High Surge Current Capability ? UL Flammability 94V?0 Classification ? MSL 1 per J?STD?020 ? Green Molding Compound ? These Devices are Pb?Free and are RoHS Compliant

文件：168.64 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>10L；Package：SOT-23；PNP Transistor

文件：1.13303 Mbytes 頁(yè)數(shù)：4 Pages

PJSEMI

平晶半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10ln80k5/marking.html">10LN80K5；Package：D2PAK；N-channel 800 V, 0.55 Ω typ., 8 A MDmesh? K5 Power MOSFET in a D2PAK package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

文件：920.57 Kbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：10LN80K5；Package：DPAK；N-channel 800 V, 0.55 Ω typ., 8 A MDmesh? K5 Power MOSFET in a DPAK package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 tec

文件：842.01 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10ln80k5/marking.html">10LN80K5；Package：PowerFLAT；N-channel 800 V, 0.59 Ω typ., 6 A MDmesh? K5 Power MOSFET in a PowerFLAT? 5x6 VHV package

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technolog

文件：833.4 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10l40c/marking.html">10L40C；Package：PSMC(TO-277A)；40 V, 2 x 5 A low forward voltage power Schottky rectifier

Features ? Low profile design – 1.1mm package typical height ? Wettable flanks for automatic visual inspection ? Very low conduction losses ? High forward surge current capability ? ECOPACK2 compliant

文件：310.75 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10lotno/marking.html">10LotNo；Package：Bulk；KEMET, SSHB10H, Commercial Grade, 6400 uH

文件：105.18 Kbytes 頁(yè)數(shù)：1 Pages

KEMETKEMET Corporation

基美

絲?。?a target="_blank" title="Marking" href="/10lotno/marking.html">10LotNo；Package：Bulk；KEMET, SSHB10HS, Commercial Grade, 5100 uH

文件：105.37 Kbytes 頁(yè)數(shù)：1 Pages

KEMETKEMET Corporation

基美

絲印：10LN80K5；Package：TO-220FP；N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：714.63 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：10LN80K5；Package：IPAKFP；N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a I?PAKFP package

文件：628.74 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體