絲?。?strong>1010；Package：DFN1006D-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：240.64 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>1010；Package：SOD1608；40 V, 1 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side

文件：231.11 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/101010/marking.html">101010；Package：DFN1010D-3；60 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits ? Very low collector-

文件：743.81 Kbytes 頁(yè)數(shù)：17 Pages

NEXPERIA

安世

絲印：101011；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1

文件：2.80864 Mbytes 頁(yè)數(shù)：21 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/101011/marking.html">101011；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ reduced pick and place costs

文件：2.80964 Mbytes 頁(yè)數(shù)：21 Pages

NEXPERIA

安世

絲印：101011；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? built-in bias resistors ? simplifies circuit design ? reduces component count ? reduced pick and place costs ? low package height of 0.37 mm ? AEC-Q101 qualified ? suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.80866 Mbytes 頁(yè)數(shù)：21 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/101001/marking.html">101001；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? AEC-Q101 qualified ? Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.78427 Mbytes 頁(yè)數(shù)：21 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/1010nab/marking.html">1010NAB；Package：SOT669；100 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Printed

文件：720.78 Kbytes 頁(yè)數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/1010nab/marking.html">1010NAB；Package：SOT669；100 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q 2. Features and benefits ? High thermal power dissipation capability ? High temperature applications up to 175 °C ? Reduced Prin

文件：283.89 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/1010pab/marking.html">1010PAB；Package：SOT669；100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ? Re

文件：719.8 Kbytes 頁(yè)數(shù)：16 Pages

NEXPERIA

安世