絲印：1010PAB；Package：SOT669；100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ? Re

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100 V, 10 A PNP high power bipolar transistor

文件：239.35 Kbytes 頁數(shù)：16 Pages

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絲印：1010PAB；Package：SOT669；100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY-Q 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ?

文件：281.36 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

100 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT61010NY. ? High thermal power dissipation capability\n? Suitable for high temperature applications up to 175 °C\n? Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n? High energy efficiency due to less heat generation\n? AEC-Q101 qualified;

Nexperia

安世

100 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT61010NY-Q

Nexperia

安世

Package：SC-100，SOT-669；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 100V 10A LFPAK56

Nexperia USA Inc.