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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          LMS03N10A

          絲?。?strong>1003;Package:SOT-23-6L;N-ChannelEnhancement Mode Power MOSFET

          文件:1.08683 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          YJH03N10A

          絲印:1003;Package:SOT-89;N-Channel Enhancement Mode Field Effect Transistor

          文件:432.54 Kbytes 頁數(shù):6 Pages

          YANGJIE

          揚(yáng)杰電子

          YJL03G10A

          絲?。?strong>1003;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor

          文件:737.94 Kbytes 頁數(shù):6 Pages

          YANGJIE

          揚(yáng)杰電子

          YJS03N10A

          絲?。?strong>1003;Package:SOT-23-6L;N-Channel Enhancement Mode Field Effect Transistor

          文件:582.34 Kbytes 頁數(shù):6 Pages

          YANGJIE

          揚(yáng)杰電子

          PHPT610030NK

          絲印:10030NK;Package:LFPAK56D;NPN/NPN high power double bipolar transistor

          1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK 2. Features and benefits ? High thermal power dissipation capability ? Suitabl

          文件:280.2 Kbytes 頁數(shù):14 Pages

          NEXPERIA

          安世

          PHPT610030NK-Q

          絲?。?a target="_blank" title="Marking" href="/10030nk/marking.html">10030NK;Package:LFPAK56D;NPN/NPN high power double bipolar transistor

          1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ? Reduced Printed-C

          文件:283.28 Kbytes 頁數(shù):14 Pages

          NEXPERIA

          安世

          PHPT610030NPK

          絲?。?a target="_blank" title="Marking" href="/1003npk/marking.html">1003NPK;Package:LFPAK56D;NPN/PNP high power double bipolar transistor

          1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK 2. Features and benefits ? High thermal power dissipation capability ? Suitable

          文件:334.68 Kbytes 頁數(shù):18 Pages

          NEXPERIA

          安世

          PHPT610030NPK-Q

          絲印:1003NPK;Package:SOT1205;NPN/PNP high power double bipolar transistor

          1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q 2. Features and benefits ? High thermal power dissipation capability ? Suit

          文件:335.63 Kbytes 頁數(shù):18 Pages

          NEXPERIA

          安世

          PHPT610030PK

          絲?。?a target="_blank" title="Marking" href="/10030pk/marking.html">10030PK;Package:SOT1205;PNP/PNP high power double bipolar transistor

          1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits ? High thermal power dissipation capability ? Suitab

          文件:727.83 Kbytes 頁數(shù):15 Pages

          NEXPERIA

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          PHPT610035NK

          絲?。?a target="_blank" title="Marking" href="/10035nk/marking.html">10035NK;Package:LFPAK56D;NPN/NPN high power double bipolar transistor

          1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits ? Current gain matchi

          文件:280.81 Kbytes 頁數(shù):14 Pages

          NEXPERIA

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          更多1003供應(yīng)商 更新時(shí)間2026-1-17 9:50:00
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