絲?。?strong>1003；Package：SOT-23-6L；N-ChannelEnhancement Mode Power MOSFET

文件：1.08683 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>1003；Package：SOT-89；N-Channel Enhancement Mode Field Effect Transistor

文件：432.54 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚杰電子

絲?。?strong>1003；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：737.94 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚杰電子

絲?。?strong>1003；Package：SOT-23-6L；N-Channel Enhancement Mode Field Effect Transistor

文件：582.34 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚杰電子

絲印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK 2. Features and benefits ? High thermal power dissipation capability ? Suitabl

文件：280.2 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ? Reduced Printed-C

文件：283.28 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲印：1003NPK；Package：LFPAK56D；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK 2. Features and benefits ? High thermal power dissipation capability ? Suitable

文件：334.68 Kbytes 頁數(shù)：18 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/1003npk/marking.html">1003NPK；Package：SOT1205；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q 2. Features and benefits ? High thermal power dissipation capability ? Suit

文件：335.63 Kbytes 頁數(shù)：18 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/10030pk/marking.html">10030PK；Package：SOT1205；PNP/PNP high power double bipolar transistor

1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits ? High thermal power dissipation capability ? Suitab

文件：727.83 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/10035nk/marking.html">10035NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits ? Current gain matchi

文件：280.81 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世