絲?。?strong>0D7；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features ? Excellent Thermal Conduction by Advanced Source?Down Center Gate Dual?Cooling Package Technology (3.3 x 3.3 mm) ? Ultra Low RDS(on) to Improve System Efficiency ? Low QG and Capacitance to Minimize Driving and Switching Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and

文件：431.55 Kbytes 頁數(shù)：8 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n4l/marking.html">0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features ? Low RDS(on) to Minimize Conduction Loss ? Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike ? Low QG and Capacitance to Minimize Driving and Switching Loss ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? High Switc

文件：185.43 Kbytes 頁數(shù)：8 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n4l/marking.html">0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features ? Low RDS(on) to Minimize Conduction Loss ? Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike ? Low QG and Capacitance to Minimize Driving and Switching Loss ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? High Switc

文件：185.43 Kbytes 頁數(shù)：8 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n4/marking.html">0D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5x6 mm) with Compact Design ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? Battery Protection ? ORing

文件：140.94 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n02/marking.html">0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features ? Advanced Source?Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction ? Ultra Low RDS(on) to Improve System Efficiency ? Low QG and Capacitance to Minimize Driving and Switching Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Ap

文件：483.92 Kbytes 頁數(shù)：8 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n4w/marking.html">0D7N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5 x 6 mm) with Compact Design ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? B

文件：278.85 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲印：0D7N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.63 m, 433 A

Features ? Small Footprint (8x8 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Power 88 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? Wettable Flank Plated for Enhanced Optical Inspection ? These D

文件：363.96 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n04c/marking.html">0D7N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features ? Small Footprint (8x8 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Power 88 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? Wettable Flank Plated Option for Enhanced Optical Inspection ?

文件：359.68 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0d7n06cl/marking.html">0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features ? Small Footprint (8x8 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Power 88 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? Wettable Flank Option for Enhanced Optical Inspection ? These D

文件：394.87 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲印：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features ? Small Footprint (8x8 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? Wettable Flank Plated for Enhanced Optical Inspection ? These Devices are Pb?Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體