絲?。?a target="_blank" title="Marking" href="/080n04/marking.html">080N04；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Advanced high cell density trench technology. - AEC-Q101 Qualified. - Excellent Cdv/dt effect decline. - Green device available.

文件：508.45 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/080n03ls/marking.html">080N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features ? Fast switching MOSFET for SMPS ? Optimized technology for DC/DC converters ? Qualified according to JEDEC1) for target applications ? N-channel; Logic level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? Superior thermal resistance ? Avalanc

文件：526.92 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/080n12ls/marking.html">080N12LS；Package：PG-TDSON-8；OptiMOSTM 3 Power-Transistor, 120 V

Features ? N-channel, logic level ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? 150 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Ideal for high-frequency switching and synchronous rectification ? Halogen-free according to IEC61249-2-

文件：1.77702 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲印：080IEBE；Package：SOT8074-1；650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1. General description The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits ? Enhancement mode - normally-off power switch ? Ultra h

文件：320.38 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/080n03l/marking.html">080N03L；Package：PG-TO263-3；OptiMOS?? Power-Transistor

Features ? Fast switching MOSFET for SMPS ? Optimized technology for DC/DC converters ? Qualified according to JEDEC1) for target applications ? N-channel, logic level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? Avalanche rated ? Pb-free plating; Ro

文件：280.26 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/080n03l/marking.html">080N03L；Package：PG-TO220-3-1；OptiMOS?? Power-Transistor

Features ? Fast switching MOSFET for SMPS ? Optimized technology for DC/DC converters ? Qualified according to JEDEC1) for target applications ? N-channel, logic level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? Avalanche rated ? Pb-free plating; Ro

文件：280.26 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/080n10n6/marking.html">080N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：1.34179 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/080n1n6/marking.html">080N1N6；Package：PG-TSDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：1.39135 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：080N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

文件：390.65 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/080n03ms/marking.html">080N03MS；Package：TDSON-8；OptiMOS?? M-Series Power-MOSFET

文件：299.24 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌