絲?。?a target="_blank" title="Marking" href="/080iebe/marking.html">080IEBE；Package：SOT8074-1；650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1. General description The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits ? Enhancement mode - normally-off power switch ? Ultra h

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650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. ? Enhancement mode - normally-off power switch\n? Ultra high frequency switching capability\n? No body diode\n? Low gate charge, low output charge\n? Qualified for standard applications\n? ESD protection\n? RoHS, Pb-free, REACH-compliant\n? High efficiency and high power density\n? Low package induc;

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