絲印：072N10N；Package：PG-TO220-3；OptiMOS3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?strong>072N10N；Package：TO-220；100V N-Channel MOSFET

Features * N-channel, normal level * Very low on-resistance Rps(on) *175 °C operating temperature * Pb-free lead plating; RoHS compliant * Ideal for high-frequency switching and synchronous rectification * ps =100V * Ip (at Vgs=10V)=80A * Rps(on)(at Ves=10V)

文件：693.81 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導(dǎo)體

絲?。?strong>072N10N；Package：PG-TO262-3；OptiMOS3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

OptiMOS3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

文件：317.03 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

100V N-Channel MOSFET

Features * N-channel, normal level * Very low on-resistance Rps(on) *175 °C operating temperature * Pb-free lead plating; RoHS compliant * Ideal for high-frequency switching and synchronous rectification * ps =100V * Ip (at Vgs=10V)=80A * Rps(on)(at Ves=10V)

文件：693.81 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導(dǎo)體