絲?。?strong>075N15N；Package：PG-TO262-3；3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

文件：744.54 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：075N15N；Package：PG-TO220-3；3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

文件：744.54 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/075n15ns/marking.html">075N15NS；Package：TO-220AB-L；150V N-Channel MOSFET

Feature: ? RDS(ON) Max, VGS@10V: 7.5mΩ ? RDS(ON) Max, VGS@7V: 9mΩ ? High Speed Switching and Low RDS(ON) ? 100 Avalanche Tested ? 100 Rg Tested ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case: TO-220AB-L package ? Termi

文件：572.92 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂