絲印：03P3；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features ? Ultra Low RDS(on) to Improve System Efficiency ? Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Power Load Switch ? Protection: Reverse Curr

文件：172.05 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲印：03P3；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

文件：203.11 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/03p3w/marking.html">03P3W；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features ? Ultra Low RDS(on) to Improve System Efficiency ? Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Power Load Switch ? Protection: Reverse Curr

文件：172.05 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/03p30/marking.html">03P30；Package：DFN1006-3；P-Channel Enhancement Mode Power MOSFET

Description The RM03P30D1E uses advanced trench technology to provide excellent RDS(ON). General Features VDS =- 30V,I D =- 0.3A RDS(ON)

文件：202.17 Kbytes 頁數(shù)：9 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/03p30/marking.html">03P30；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

Description The RM03P30S2E uses advanced trench technology to provide excellent RDS(ON). General Features VDS =- 30V,I D =- 0.3A RDS(ON)

文件：207.54 Kbytes 頁數(shù)：9 Pages

RECTRON

麗正國際