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          首頁
                >039>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          GAN039-650NBB
          絲印：039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
          
1. General description
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It
is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology
and low-voltage silicon MOSFET technologies — offering superior reliability and performanc
          文件：301.95 Kbytes 頁數(shù)：10 Pages
          NEXPERIA
          安世
          

          GAN039-650NBB
          絲印：039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
          
1. General description
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It
is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology
and low-voltage silicon MOSFET technologies — offering superior reliability and performanc
          文件：526.52 Kbytes 頁數(shù)：14 Pages
          NEXPERIA
          安世
          

          GAN039-650NBBA
          絲?。?a target="_blank" title="Marking" href="/039inbba/marking.html">039INBBA；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
          
1. General description
The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a
CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN
HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior rel
          文件：301.11 Kbytes 頁數(shù)：10 Pages
          NEXPERIA
          安世
          

          GAN039-650NTB
          絲印：039INTBX；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
          
1. General description
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted
package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT
H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and

          文件：285.04 Kbytes 頁數(shù)：10 Pages
          NEXPERIA
          安世
          

          GAN039-650NTB
          絲?。?a target="_blank" title="Marking" href="/039intb/marking.html">039INTB；Package：CCPAK1212i；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
          
1. General description
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted
package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT
H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and

          文件：481.57 Kbytes 頁數(shù)：14 Pages
          NEXPERIA
          安世
          

          GAN039-650NTBA
          絲?。?a target="_blank" title="Marking" href="/039intba/marking.html">039INTBA；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
          
1. General description
The GAN039-650NTBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a
CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest highvoltage
GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering
su
          文件：284.2 Kbytes 頁數(shù)：10 Pages
          NEXPERIA
          安世
          

          IPF039N08NF2S
          絲印：039N08NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor
          
Features
? Optimized for a wide range of applications
? N-Channel, normal level
? 100 avalanche tested
? Pb-free lead plating; RoHS compliant
? Halogen-free according to IEC61249-2-21
          文件：965.69 Kbytes 頁數(shù)：11 Pages
          INFINEON
          英飛凌
          

          IPT039N15N5
          絲印：039N15N5；Package：PG-HSOF-8；OptiMOS Power-Transister, 150 V
          
Features
*N-channel
*Very low on-resistance Rds(on)
*Superior thermal resistance
*100 avalanche tested
*Pb-free lead plating; RoHS compliant
*Halogen-free according to IEC61249-2-21
          文件：1.82237 Mbytes 頁數(shù)：11 Pages
          INFINEON
          英飛凌
          

          IPTC039N15NM5
          絲?。?a target="_blank" title="Marking" href="/039n15n5/marking.html">039N15N5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 150 V
          
Features
? N-channel, normal level
? Very low on-resistance RDS(on)
? Superior thermal resistance
? 100 avalanche tested
? Pb-free lead plating; RoHS compliant
? Halogen-free according to IEC61249-2-21
          文件：1.74308 Mbytes 頁數(shù)：13 Pages
          INFINEON
          英飛凌
          

          IPTG039N15NM5
          絲?。?a target="_blank" title="Marking" href="/039n15n5/marking.html">039N15N5；Package：PG-HSOG-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V
          
Features
? N-channel, normal level
? Very low on-resistance RDS(on)
? Superior thermal resistance
? 100 avalanche tested
? Pb-free lead plating; RoHS compliant
? Halogen-free according to IEC61249-2-21
          文件：1.63257 Mbytes 頁數(shù)：13 Pages
          INFINEON
          英飛凌
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • 工作溫度：
            0 to 200 F (-18 to 93 C)
          • 扭矩傳感器類型：
            Rotary
          • 產(chǎn)品形式：
            Sensor or Transducer
          • 產(chǎn)品類別：
            Torque Sensors
          
            
          
        
          
            
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          MOLEX
          		

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          DIP
          		

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          5
          		

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          MSC
          		

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          8513
          		

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          NA
          		

          12730
          		

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          更多039供應(yīng)商
            更新時間2026-1-19 16:28:00
        
          
        
          
          
          
            
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