| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/035r5nd/marking.html">035R5ND；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲印：035R5NL5；Package：PDFN-8-5X6X0.95-1.27；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This 文件：269.89 Kbytes 頁數(shù)：7 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nmj/marking.html">035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.32 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nmj/marking.html">035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nmj/marking.html">035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nmj/marking.html">035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nsa/marking.html">035R5NSA；Package：SOP-8-225-1.27；21A, 30V N-CHANNEL MOSFET DESCRIPTION SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This dev 文件：249.53 Kbytes 頁數(shù)：7 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nsa/marking.html">035R5NSA；Package：SOP-8-225-1.27；21A, 30V N-CHANNEL MOSFET DESCRIPTION SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This dev 文件：249.53 Kbytes 頁數(shù)：7 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nt/marking.html">035R5NT；Package：TO-220-3L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.32 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nt/marking.html">035R5NT；Package：TO-220-3L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN |
技術(shù)參數(shù)
- Mounting Method：
HORIZONTAL CONTACTS MOUNT
- Current Rating (Continuous) in Amps：
11
- Current Rating (Max)：
15
- Voltage Rating (Max)：
32
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
2447 |
TSSOP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
LITTELFUSE |
24+/25+ |
33667 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
INFINEON |
03/04+ |
SOP8 |
34 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | ||
INTERCONNECT |
500 |
MLL |
72700 |
詢價 | |||
INFINEON |
2016+ |
QFN |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
24+ |
4000 |
詢價 | |||||
SHARP |
24+ |
SOT252-5 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
infineon |
25+ |
SON-8 |
4500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
Littelfuse |
新 |
12 |
全新原裝 貨期兩周 |
詢價 | |||
koa |
23+ |
NA |
82486 |
專做原裝正品,假一罰百! |
詢價 |
相關(guān)規(guī)格書
更多- AIP5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- 4TPE330MW
相關(guān)庫存
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- 4TPE330M
