| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/035n08n/marking.html">035N08N；Package：PG-TO263-3；OptiMOS?3 Power-Transistor Features ? Ideal for high frequency switching and sync. rec. ? Optimized technology for DC/DC converters ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100% avalanche tested ? Pb-free plating; RoHS compliant ? Qualified acc 文件：503.84 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/035n10ns/marking.html">035N10NS；Package：PG-TO263-3；MOSFET StrongIRFET? 2 Power?Transistor, 100 V Features ? Optimized for a wide range of applications ? N?channel, normal level ? 100% avalanche tested ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21 文件：883.46 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/035n12n6/marking.html">035N12N6；Package：PG-TO263-3；OptiMOSTM 6 Power-Transistor, 120 V Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ? 文件：1.16883 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/035n08n/marking.html">035N08N；Package：PG-TO263-3；OptiMOS3 Power-Transistor Features ? Ideal for high frequency switching and sync. rec. ? Optimized technology for DC/DC converters ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Qualified accordin 文件：1.026859 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/035n10lf/marking.html">035N10LF；Package：PG-TDSON-8FL；OptiMOSTM 5 Linear FET, 100 V Features ? Ideal for hot-swap, battery protection and e-fuse applications ? Very low on-resistance RDS(on) ? Wide safe operating area SOA ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 文件：1.35965 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/035n30g/marking.html">035N30G；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE025N30G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features 文件：756.67 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/035p40gu/marking.html">035P40GU；Package：DFN5x6-8L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE035P40GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Load switch ● Battery protectio General Features ● VDS =-40V,ID =-130A RDS(ON) 文件：644.44 Kbytes 頁數(shù)：6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/035r5nd/marking.html">035R5ND；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.32 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nd/marking.html">035R5ND；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/035r5nd/marking.html">035R5ND；Package：TO-252-2L；100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. 文件：369.3 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN |
技術(shù)參數(shù)
- Mounting Method：
HORIZONTAL CONTACTS MOUNT
- Current Rating (Continuous) in Amps：
11
- Current Rating (Max)：
15
- Voltage Rating (Max)：
32
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
2447 |
TSSOP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
LITTELFUSE |
24+/25+ |
33667 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
INFINEON |
03/04+ |
SOP8 |
34 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
INTERCONNECT |
500 |
MLL |
72700 |
詢價(jià) | |||
INFINEON |
2016+ |
QFN |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
24+ |
4000 |
詢價(jià) | |||||
SHARP |
24+ |
SOT252-5 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
infineon |
25+ |
SON-8 |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
Littelfuse |
新 |
12 |
全新原裝 貨期兩周 |
詢價(jià) | |||
koa |
23+ |
NA |
82486 |
專做原裝正品,假一罰百! |
詢價(jià) |
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