OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ? Ideal for high frequency switching and sync. rec. ? Optimized technology for DC/DC converters ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Qualified accordin

文件：483.71 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?strong>024N06N；Package：PG-TO262-3；OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ? Ideal for high frequency switching and sync. rec. ? Optimized technology for DC/DC converters ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Qualified accordin

文件：483.71 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?strong>024N06N；Package：PG-TO220-3；OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ? Ideal for high frequency switching and sync. rec. ? Optimized technology for DC/DC converters ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Qualified accordin

文件：483.71 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

N-Channel PowerTrench? MOSFET 60V, 265A, 2.4m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 1.8m? ( Typ.) @ VGS = 10V, ID = 75A ? F

文件：619.67 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

文件：1.05997 Mbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

MOSFET – Power, Single N-Channel, 8FL

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Power Tools, Battery Operated Vacuum

文件：215.04 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體