N-Channel PowerTrench? MOSFET 60V, 265A, 2.4m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 1.8m? ( Typ.) @ VGS = 10V, ID = 75A ? F

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，60V，265A，2.4mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開(kāi)關(guān)性能而定制的。 ?RDS(on) = 1.8m? （典型值）@ VGS = 10V，ID = 75A\n?快速開(kāi)關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

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KEC

KEC(Korea Electronics)

MOSFET – Power, Single N-Channel, 8FL

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Power Tools, Battery Operated Vacuum

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ONSEMI

安森美半導(dǎo)體

MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWD024N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

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ONSEMI

安森美半導(dǎo)體