絲印：013N；Package：WDFNW6；MOSFET - Power, Single N-Channel 30 V, 13 m, 35 A

Features ? Small Footprint for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：160.24 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/013n06ns/marking.html">013N06NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.05965 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/013n04ns/marking.html">013N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.05586 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/013n04ns/marking.html">013N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：989.65 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/013n08lf/marking.html">013N08LF；Package：PG-HSOF-8；OptiMOSTM 5 Linear FET, 80 V

Features ? Ideal for hot-swap and e-fuse applications ? Very low on-resistance RDS(on) ? Wide safe operating area SOA ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：771.75 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/013n08lh/marking.html">013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：283.8 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/013n08lh/marking.html">013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

文件：283.29 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體