絲印：0111；Package：SOD882D；Very low capacitance bidirectional ESD protection diode

1. General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package wi

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絲印：0111；Package：DFN1006D-2；Very low capacitance bidirectional ESD protection diode

1. General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package wi

文件：263.52 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/011100/marking.html">011100；Package：DFN1010D-3；30 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. 2. Features and benefits ? Very low collector-

文件：730.47 Kbytes 頁數(shù)：17 Pages

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絲?。?a target="_blank" title="Marking" href="/011110/marking.html">011110；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits ? 500 mA output current capability ? Built-in bias resistors ? ? 10 resistor ratio tolerance ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of sold

文件：2.00195 Mbytes 頁數(shù)：22 Pages

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絲印：011110；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

文件：2.00194 Mbytes 頁數(shù)：22 Pages

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絲?。?a target="_blank" title="Marking" href="/011111/marking.html">011111；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Features and benefits ? 500 mA output current capability ? Built-in bias resistors ? ? 10 resistor ratio tolerance ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of sold

文件：1.96439 Mbytes 頁數(shù)：22 Pages

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絲?。?a target="_blank" title="Marking" href="/011101/marking.html">011101；Package：SOT1215；50 V, 500 mA NPN resistor-equipped transistors

Features and benefits ? 500 mA output current capability ? Built-in bias resistors ? ? 10 resistor ratio tolerance ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of sold

文件：2.34705 Mbytes 頁數(shù)：24 Pages

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絲?。?a target="_blank" title="Marking" href="/011101/marking.html">011101；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 500 mA output current capability ■ Reduced pick and place costs ■ Built

文件：2.34774 Mbytes 頁數(shù)：24 Pages

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絲?。?a target="_blank" title="Marking" href="/011111/marking.html">011111；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

文件：1.96506 Mbytes 頁數(shù)：22 Pages

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Fuse Blocks and Clips

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

文件：136.04 Kbytes 頁數(shù)：1 Pages

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